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2SC4108 Datasheet PDF

Sanyo Electric 2SC4108

the 2SC4108 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
Part No. 2SC4108
Datasheet 2SC4108 Download
Manufacturer
Sanyo Electric
Description NPN Triple Diffused Planar Silicon Transistor
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2SC4108 datasheet page 1 preview

APPLICATIONS

FEATURES

● High breakdown voltage and high reliability.
● Fast switching speed.
● Wide ASO.
● Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC4108] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 20.0 1.4 0.6 Specifications 123 0.6 5.45 5.45 1.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB

ABSOLUTE MAXIMUM RATINGS

at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP IB PC Junction Temperature Storage Temperature Tj Tstg Conditions PW≤300µs, duty cycle≤10% Tc=25˚C Ratings 500 400 7 12 25 4 2.5 100 150 –55 to +150 Unit V V V A A A W W ˚C ˚C

ELECTRICAL CHARACTERISTICS

at Ta = 25˚C Parameter Symbol Conditions Ratings min typ Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE1 hFE2 hFE3 VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1.6A VCE=5V, IC=8A VCE=5V, IC=10mA 15* 10 10 * : The hFE1 of the 2SC4108 is classified as follows.
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