Sanyo Electric 2SC4390
NPN Epitaxial Planar Silicon Transistor
| Part No. | 2SC4390 |
|---|---|
| Datasheet | 2SC4390 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Adoption of MBIT process.● High DC current gain (hFE=800 to 3200).
● Large current capacity (IC=2A).
● Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V).
● High VEBO (VEBO≥15V). Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta=25°C Conditions Mounted on a ceramic board (250mm2✕0.8mm) Parameter Collector Cutoff Current Emitter Cutoff Current Marking : CJ Symbol ICBO IEBO Conditions VCB=15V, IE=0A VEB=10V, IC=0A min Ratings 20 10 15 2 4 0.4 500 1.3 150 --55 to +150 Unit V V V A A A mW W °C °C Ratings typ max Unit 0.1 μA 0.1 μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application",...
