Sanyo Electric 2SC4630
NPN Triple Diffused Planar Silicon Transistor
APPLICATIONS
FEATURES
● High breakdown voltage (VCEO min=900V).● Small Cob (typical Cob=2.8pF).
● Full isolation package.
● High reliability (Adoption of HVP process). Package Dimensions unit:mm 2079B [2SC4630] 10.0 4.5 2.8 3.5 3.2 7.2 16.0 16.1 0.9 1.2 3.6 0.75 1 2 3 14.0 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.55 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI (LS) 2.4 0.6 0.7 Ratings 1500 900 5 100 300 2 150 –55 to +150 Unit V V V mA mA W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter w Symbol D a t a Conditions VChB=900V e , IE=0 e VEB=4V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=10mA IC=20mA, IB=4mA IC=20mA, IB=4mA t 4 U . n Ratings min e typ t max 10 10 Unit µA µA MHz 5 2 V V V V V Collectw or Cutofwf Curren . t...