Sanyo Electric 2SC4644
NPN TRANSISTOR
FEATURES
● Adoption of MBIT process.● High breakdown voltage (VCEO≥400V).
● Excellent linearity of hFE. PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver
APPLICATIONS
Package Dimensions unit:mm 2064 [2SA17814/2SC4644] ( ) : 2SA1784 SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE fT Cob Cre VCE(sat) VCB=(–)300V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)50mA VCE=(–)30V, IC=(–)10mA VCB=(–)30V, f=1MHz VCB=(–)30V, f=1MHz I...