Sanyo Electric 2SC4645
NPN TRANSISTOR
FEATURES
● Large current capacity (IC=1A).● High breakdown voltage (VCEO≥400V). 2SA1785 : PNP Epitaxial Planar Silicon Transistor 2SC4645 : NPN Triple Diffused Planar Silicon Transistor 2SA1785/2SC4645 High Voltage Driver
APPLICATIONS
Package Dimensions unit:mm 2064A [2SA1785/2SC4645] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 1.0 0.9 1 0.6 0.5 23 0.45 ( ) : 2SA1785 SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C 2.54 Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)300V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)10V, IC=(–)100mA Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)50mA Output Capacitance Cob VCB=(–)30V, f=1MHz Collector-to-Emitter Saturation Voltage V...