Sanyo Electric 2SC5069
NPN TRANSISTOR
APPLICATIONS
FEATURES
● High current capacity.● Adoption of MBIT process.
● High DC current gain.
● Low collector-to-emitter saturation voltage.
● High VEBO. Package Dimensions unit:mm 2038A [2SC5069] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Mounted on ceramic board (250mm2× 0.8mm) 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Ratings 30 25 15 2 4 0.4 1.5 150 –55 to +150 Unit V V V A A A W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Marking :CU Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=...