2SC5310 Datasheet PDF

APPLICATIONS

FEATURES

● Adoption of FBET, MBIT processes.
● Large current capacitance.
● Low collector-to-emitter saturation voltage.
● High-speed switching.
● Ultrasmall package facilitates miniaturization in end products. Package Dimensions unit:mm 2018B [2SA1973/2SC5310] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications ( ) : 2SA1973

ABSOLUTE MAXIMUM RATINGS

at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a glass-epoxy board (20×30×1.6mm) 1 : Base 2 : Emitter 3 : Collector SANYO : CP Conditions 0.8 1.1 Ratings (–)30 (–)25 (–)6 (–)1 (–)3 (–)200 250 150 –55 to +150 Unit V V V A A mA mW ˚C ˚C

ELECTRICAL CHARACTERISTICS

at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE VCB=(–)20V, IE...