Sanyo Electric 2SC5637
NPN Triple Diffused Planar Silicon Transistor
| Part No. | 2SC5637 |
|---|---|
| Datasheet | 2SC5637 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High speed (tf=100ns typ).● High breakdown voltage (VCBO=1500V).
● High reliability (Adoption of HVP process).
● Adoption of MBIT process. Package Dimensions unit:mm 2174 [2SC5637] 16.0 5.0 3.4 5.6 3.1 0.8 22.0 21.0 4.0 2.8 2.0 0.7 1 2 5.45 3.5 3 20.4 0.9 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions 0.8 2.1 Ratings 1500 800 6 10 25 3.0 85 150 –55 to +150 Unit V V V A A W W ˚C ˚C Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage TemperatureELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES VCB=800V, IE=0 VCE=15...
