Sanyo Electric 2SC5639
NPN Triple Diffused Planar Silicon Transistor
| Part No. | 2SC5639 |
|---|---|
| Datasheet | 2SC5639 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High speed (tf=100ns typ).● High breakdown voltage (VCBO=1500V).
● High reliability (Adoption of HVP process).
● Adoption of MBIT process. Package Dimensions unit:mm 2174 [2SC5639] 16.0 5.0 3.4 5.6 3.1 0.8 22.0 21.0 4.0 2.8 2.0 0.7 1 2 5.45 3.5 3 20.4 0.9 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions 0.8 2.1 Ratings 1500 800 6 20 40 3 100 150 –55 to +150 Unit V V V A A W W ˚C ˚C Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage TemperatureELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain Symbol ICES VCE=1500V, RBE=0 VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 ICBO VCB=800V, IE=0 hFE1 hFE2 VCE=5V, IC=1A VCE=5V, IC=16A Conditions Ratings min 800 1.0 10 20 4 30 7 typ max 1.0 Unit mA V mA µA Continued on next page.
