Sanyo Electric 2SC5951
NPN Triple Diffused Planar Silicon Transistor
| Part No. | 2SC5951 |
|---|---|
| Datasheet | 2SC5951 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● Package Dimensions unit : mm 2042B [2SC5951] 8.0 1.0 1.4 4.0 1.0 3.3 High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤300µs, duty cycle≤10% Conditions 4.8 1.7 Specifications 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML Ratings 700 400 8 1.5 3 0.7 1.5 Unit V V V A A A W W °C °C 2.4 Tc=25°C 10 150 --55 to +150ELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=400V, IE=0 VEB=5V, IC=0 Ratings min typ max 10 10 Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not...
