Sanyo Electric 2SC5966
NPN SILICON TRANSISTOR
| Part No. | 2SC5966 |
|---|---|
| Datasheet | 2SC5966 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● Package Dimensions unit : mm 2174A [2SC5966] 16.0 5.0 High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH 5.45 DataSheet4U.com 3.5 0.8 2.1 Conditions Ratings 1700 800 5 20 40 3.0 100 150 --55 to +150 Unit V V V A A W W °C °C DataSheeELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Collector-to-Emitter Breakdown Voltage Emitter Cutoff Current Symbol ICBO ICES V(BR)CEO IEBO Conditions VCB=800V, IE=0 VCE=1700V, RBE=0 IC=10mA, RBE=∞ VEB=4V, IC=0 Ratings min typ max 10 1.0 800 1.0 Unit µA mA V mA Continued on next page.
