Sanyo Electric 2SC5968
NPN Triple Diffused Planar Silicon Transistor
| Part No. | 2SC5968 |
|---|---|
| Datasheet | 2SC5968 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● Package Dimensions unit : mm 2048B [2SC5968] 6.0 High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process. 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C 2.8 1 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL 5.45 5.45 DataSheet4U.com Conditions Ratings 1700 800 5 25 50 3.5 210 150 --55 to +150 Unit V V V A A W W °C °C DataSheeELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Collector-to-Emitter Breakdown Voltage Emitter Cutoff Current Symbol ICBO ICES V(BR)CEO IEBO Conditions VCB=800V, IE=0 VCE=1700V, RBE=0 IC=10mA, RBE=∞ VEB=4V, IC=0 Ratings min typ max 10 1.0 800 1.0 Unit µA mA V mA Continued on next page.
