Sanyo Electric 2SC6064
NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
● NPN Epitaxial Planar Silicon Transistor High-Current SwitchingAPPLICATIONS
Voltage regulators, relay drivers, lamp drivers, electrical equipment.FEATURES
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● Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings 80 80 50 6 2 4 0.9 150 --55 to +150 Unit V V V V A A W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Conditions VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=100mA VCE=2V, IC=1.5A VCE=10V, IC=300mA VCB=10V, f=1MHz Ratings min typ max 1 1 200 40 420 9 MHz pF 560 Unit µA µA Continued on next page.