Sanyo Electric 2SC6065
NPN Triple Diffused Planar Silicon Transistor
FEATURES
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● NPN Triple Diffused Planar Silicon Transistor Switching Regulator
APPLICATIONS
High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤300µs, duty cycle≤10% Conditions Ratings 500 400 8 1.5 3 0.7 0.9 150 --55 to +150 Unit V V V A A A W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 hFE3 Conditions VCB=400V, IE=0A VEB=5V, IC=0A VCE=5V, IC=0.1A VCE=5V, IC=0.7A VCE=5V, IC=1mA Ratings min typ max 10 10 20 10 10 50 Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle appl...