Sanyo Electric 2SC6080
NPN Epitaxial Planar Silicon Transistor
APPLICATIONS
● 50V / 13A High-Speed SwitchingAPPLICATIONS
High-speed switching applications (switching regulator, driver circuit).FEATURES
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● Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C PW≤10µs, duty cycle≤10% Conditions Ratings 60 60 50 6 13 15 2 2 25 150 --55 to +150 Unit V V V V A A A W W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 Conditions VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=270mA VCE=2V, IC=8.1A 200 50 Ratings min typ max 10 10 560 Unit µA µA Continued on next page.