Sanyo Electric 2SD1618
PNP/NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
FEATURES
● Low collector-to-emitter saturation voltage.● Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1118/2SD1618] ( ) : 2SB1118 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Mounted on ceramic board (250mm2×0.8mm) Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE1 hFE2 fT VCB=(–)15V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)50mA VCE=(–)2V, IC=(–)500mA VCE=(–)10V, IC=(–)50mA * ; The 2SB1118/2SD1618 are classified by 50mA hFE as follows : 140 S 280 200 T 400 280 U 560 Marking 2SB1118 : BA 2SD1618 : DA hFE rank : S, T, U E : Emitter C : C...