Sanyo Electric 2SD330
NPN Transistor
APPLICATIONS
FEATURES
● Especially suited for use in output stage of 10W AF Power amplifier.● Complementary pair with the 2SB514 and 2SD313. Package Dimensions unit:mm 2010C [2SB514/2SD330] ( ) : 2SB514 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Tj Storage Temperature TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)20V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE1 VCE=(–)2V, IC=(–)1A hFE2 VCE=(–)2V, IC=(–)0.1A Gain-Bandwidth Product fT VCE=(–)5V, IC=(–)0.5A Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)2A, IB=(–)0.2A Base-to-Emitter Voltage VBE IC=(–)1A, VCE=–(–)5V * : The 2SB514/2SD330 are classified by 1A hFE as follows : 40 C 80 60 D 120 100 E 200 160 F 3...