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2SD330 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A Complement to Type 2SB514 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for

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Datasheet Details

Part number 2SD330
Manufacturer INCHANGE
File Size 208.79 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor 2SD330 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·Complement to Type 2SB514 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially suited for use in output stage of 10W AF power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 1.
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