2SD338 datasheet by Inchange Semiconductor.
| Part number | 2SD338 |
|---|---|
| Datasheet | 2SD338-INCHANGE.pdf |
| File Size | 192.04 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 70V(Min) ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
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