Datasheet Details
| Part number | 2SD338 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.04 KB |
| Description | NPN Transistor |
| Datasheet | 2SD338-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD338.
| Part number | 2SD338 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.04 KB |
| Description | NPN Transistor |
| Datasheet | 2SD338-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 70V(Min) ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD338 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;
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