Datasheet Details
| Part number | 2SD334 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.29 KB |
| Description | NPN Transistor |
| Datasheet | 2SD334-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD334 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.29 KB |
| Description | NPN Transistor |
| Datasheet | 2SD334-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD334 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD334 | Si NPN Transistor | Panasonic Semiconductor |
| Part Number | Description |
|---|---|
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| 2SD316 | NPN Transistor |