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2SD334 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high power amplifier applications.

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Datasheet Details

Part number 2SD334
Manufacturer INCHANGE
File Size 202.29 KB
Description NPN Transistor
Datasheet download datasheet 2SD334 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD334 isc website：www.iscsemi.
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