2SD334 datasheet by Inchange Semiconductor.
| Part number | 2SD334 |
|---|---|
| Datasheet | 2SD334-INCHANGE.pdf |
| File Size | 202.29 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD334 | Si NPN Transistor | Panasonic Semiconductor |
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| 2SD312 | NPN Transistor |
| 2SD313 | NPN Transistor |
| 2SD314 | NPN Transistor |
| 2SD315 | NPN Transistor |
| 2SD316 | NPN Transistor |
