Datasheet4U Logo Datasheet4U.com

2SD339 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR) CEO= 90V(Min) Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 7.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for u

📥 Download Datasheet

Datasheet preview – 2SD339

Datasheet Details

Part number 2SD339
Manufacturer INCHANGE
File Size 192.48 KB
Description NPN Transistor
Datasheet download datasheet 2SD339 Datasheet
Additional preview pages of the 2SD339 datasheet.

📁 Similar Datasheet

  • 2SD330 - NPN Transistor (Sanyo Semicon Device)
  • 2SD331 - Transistor (Sanyo Semicon Device)
  • 2SD334 - Si NPN Transistor (Panasonic Semiconductor)
  • 2SD30 - NPN Transistor (Sanyo Semiconductor)
  • 2SD311 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD313 - NPN Transistor (UTC)
  • 2SD313 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD313 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SD313 - NPN Silicon Epitaxial Power Transistor (WEITRON)
  • 2SD313 - NPN Transistor (Dc Components)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD339 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 90V(Min) ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 7.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
Published: |