Sanyo Electric 2SJ272
P-Channel MOSFET
APPLICATIONS
FEATURES
● Low ON resistance.● Ultrahigh-speed switching.
● Low-voltage drive.
● Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SJ272] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Conditions PW≤10µs, duty cycle≤1% Allowable Power Dissipation Channel Temperature Storage Temperature PD Tc=25°C Tch TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol Conditions V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) ID=–1mA, VGS=0 IG=±100µA, VDS=0 VDS=–100V, VGS=0 VGS=±12V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–3A ID=–3A, VG...