Sanyo Electric 2SJ276
P-Channel MOSFET
APPLICATIONS
FEATURES
● Low ON resistance.● Ultrahigh-speed switching.
● Low-voltage drive.
● Surface mount type device making the following possible.
● Reduction in the assembling time for 2SJ276- applied equipment.
● High-density surface mount applications.
● Small size of 2SJ276-applied equipment. Package Dimensions unit:mm 2090A [2SJ276] 10.2 4.5 1.3 1.5max 8.8 3.0 9.9 0.8 1.4 12 0.8 2.55 3 1.2 2.55 1.35 0 to 0.3 0.4 Specifications 2.55 2.55 2.7 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Ratings –100 ±20 –8 –32 1.65 60 150 –55 to +150 Unit V V A A W W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Curren...