Sanyo Electric 2SJ646
P-Channel MOSFET
| Part No. | 2SJ646 |
|---|---|
| Datasheet | 2SJ646 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●●
● General-Purpose Switching Device
APPLICATIONS
Low ON-resistance. Ultrahigh-speed switching. 4V drive. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions Ratings --30 ±20 --8 Unit V V A A W W °C °C PW≤10µs, duty cycle≤1% Tc=25°C --32 1 15 150 --55 to +150 Channel Temperature Storage TemperatureELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=--1mA, VGS=0V VDS=-30V, VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-4A ID=--4A, VGS=-10V ID=--2A, VGS=-4.5V ID...
