onsemi 2SJ646
P-Channel Silicon MOSFET
| Part No. | 2SJ646 |
|---|---|
| Datasheet | 2SJ646 Download |
| Manufacturer |  onsemi |
| Description | P-Channel Silicon MOSFET |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Low ON-resistance.● Ultrahigh-speed switching.
● 4V drive. Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--4A ID=--4A, VGS=--10V ID=--2A, VGS=--4.5V ID=--2A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz Ratings Unit --30 V ±20 V --...
