2SJ650 Datasheet PDF

FEATURES

● Low ON-resistance.
● Ultrahigh-speed switching.
● 4V drive. 2SJ650 P-Channl Silicon MOSFET 2SJ650 DC / DC Converter

APPLICATIONS

Package Dimensions unit : mm 2063A 10.0 3.2 [2SJ650] 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg

ELECTRICAL CHARACTERISTICS

at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Tc=25°C Ratings Unit --60 V ±20 V --12 A --48 A 2.0 W 20 W 150 °C --55 to +150 °C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : J650 Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) yfs ID=--1mA, VGS=0 VDS=--60V, VGS=0 VGS=±16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--6A min --60 --1.2 7 Ratings Unit typ max V --1 µA ±10 µA --2.6 V 10 S Continued on next page.