Sanyo Electric 2SJ655
P-Channel Silicon MOSFET
| Part No. | 2SJ655 |
|---|---|
| Datasheet | 2SJ655 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
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● P-Channel Silicon MOSFET General-Purpose Switching Device
APPLICATIONS
Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --100 ±20 --12 --48 2.0 25 150 --55 to +150 Unit V V A A W W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=--1mA, VGS=0 VDS=-100V, VGS=0 VGS= ±16V, VDS=0 VDS=-10V, ID=--1mA VDS...
