Sanyo Electric 2SJ658
P-Channel MOSFET
| Part No. | 2SJ658 |
|---|---|
| Datasheet | 2SJ658 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● Package Dimensions unit : mm 2178 [2SJ658] 5.0 4.0 4.0 Low ON-resistance. High-speed switching. 2.5V drive. 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 1 : Source 2 : Drain 3 : Gate 1.3 1.3 SANYO : NP Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -20 ±10 --2 --8 0.7 150 --55 to +150 Unit V V A A W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Symbol V(BR)DSS IDSS Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 Ratings min --20 --10 typ max Unit V µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-s...
