Sanyo Electric 2SK1065
The 2SK1065 is classified by IDSS as follows (unit : mA) : IDSS rank 3 4 5 IDSS 1.2 to 3.0 2.5 to 6.0 5.0 to 12.0 (Note) Marking : T • For CP package version, use the 2SK242.| Part No. | 2SK1065 |
|---|---|
| Datasheet | 2SK1065 Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel Junction Silicon FET |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Ultrasmall package facilitates miniaturization in end products.● Small Crss (Crss=0.04pF typ). 0.425 Package Dimensions unit:mm 2057A [2SK1065] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 1 : Gate 2 : Drain 3 : Source SANYO : MCP Conditions Ratings –20 10 20 150 150 –55 to +150 Unit V mA mA mW ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage V(BR)GDO IG=–10µA Gate-to-Source Leakage Current IGSS VGS=–0.5V, VDS=0 Zero-Gate Voltage Drain Current IDSS VDS=5V, VGS=0 Cutoff Voltage VGS(off) VDS=5V, ID=10µA Forward Transfer Admittance | yfs |1 | yfs |2 VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=100MHz * : Ratings min typ max Unit –20 V –10 nA 1.2* 12.0* mA –0.4 –1.3 –2.5 V 2.4 6.0 mS 2.4 6.0 mS Continued on next page.
