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2SK3835 - N-Channel Silicon MOSFET

Key Features

  • Ultrahigh-speed switching.
  • 4V drive.
  • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse).
  • 1 Avalanche Current.
  • 2.
  • 1 VDD=20V, L=100µH, IAV=50A.
  • 2 L≤100µH, single pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Conditions.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN8637 2SK3835 2SK3835 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Ultrahigh-speed switching. • 4V drive. • Avalanche resistance guarantee.