Sanyo Electric 5LN01SS
N-Channel Silicon MOSFET
| Part No. | 5LN01SS |
|---|---|
| Datasheet | 5LN01SS Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel Silicon MOSFET |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● Package Dimensions unit : mm 2179 [5LN01SS] 1.4 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.3 0.25 0.1 3 0.8 0.2 0.3 1 0.45 2 1.4 1 : Gate 2 : Source 3 : Drain 0.6 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions SANYO : SSFP Ratings 50 ±10 0.1 0.4 0.15 150 --55 to +150 Unit V V A A W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0 VDS=50V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=50mA ID=50mA, VGS=4V ID=30mA, VGS=2.5V ID=10mA, VGS=1.5V Ratings min 50 10 ± 10 0.4 0.13 0.18 6 7.1 10 7.8 9.9 20 1.3 typ max Unit V µA µA V S Ω Ω Ω Marking : YB Continued on next page.
