onsemi 5LN01SS
5LN01SS IS -- VSD 3 VGS=0V 2 0.1 7 5 3 2 0.01 0.5 100 7 5 3 2 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V IT00062 Ciss, Coss, Crss -- VDS f=1MHz 10 7 Ciss 5 Coss 3 2 Crss 1.0 0 5 10 15 20 25 30 35 40 45 50 Drain to Source Voltage, VDS -- V IT00064 0.2 PD -- Ta Gate to Source Voltage, VGS -- V Switching Time, SW Time -- ns 1000 7 5 3 2 100 7 5 3 2 SW Time -- ID VDD=25V VGS=4V td(off) tf tr td(on) 10 0.01 10 VDS=10V 9 ID=100mA 8 23 5 Drain Current, ID -- A VGS -- Qg 7 0.1 IT00063 7 6 5| Part No. | 5LN01SS |
|---|---|
| Datasheet | 5LN01SS Download |
| Manufacturer |  onsemi |
| Description | N-Channel Small Signal MOSFET |
| Buy | Stock & Price |
FEATURES
● Low ON-resistance● Ultrahigh-speed switching
● 1.5V drive Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings 50 ±10 0.1 0.4 0.15 150 --55 to +150 Unit V V A A W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7029A-003 1.4 0.3 0.8 0.3 1.4 0.25 0.1 3 5LN01SS-TL-E 5LN01SS-TL-H 0 to 0.02 1 0.45 2 0.2 0.07 0.6 12 3 1 : Gate 2 : Source 3 : Drain SSFP 0.07 Ordering & Pa...
