Sanyo Electric ATP103
P-Channel Silicon MOSFET
| Part No. | ATP103 |
|---|---|
| Datasheet | ATP103 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
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● P-Channel Silicon MOSFET General-Purpose Switching Device
APPLICATIONS
Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --30 ±20 --55 --165 50 150 --55 to +150 57 --28 Unit V V A A W °C °C mJ A Note : *1 VDD=--10V, L=100μH, IAV=--28A *2 L≤100μH, Single pulseELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions -1mA, VGS=0V ID=-30V, VGS=0V VDS=VGS=±16V, VDS=0V Ratings min --30 -1 ±10 typ max Unit V μA μA Marking : ATP103 Continued on next page.
