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ATP103 Datasheet PDF

onsemi ATP103

P-Channel Power MOSFET

Part No. ATP103
Datasheet ATP103 Download
Manufacturer
onsemi
Description P-Channel Power MOSFET
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ATP103 datasheet page 1 preview

FEATURES

● Low ON-resistance
● Slim package
● Halogen free compliance
● Large current
● 4.5V drive
● Protection diode in Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--10V, L=100μH, IAV=--28A *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --30 ±20 --55 --165 50 150 --55 to +150 57 --28 Unit V V A A W °C °C mJ A Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7057-001 6.5 4 1.5 0.4 ATP103-TL-H 4.6 2.6 0.4 Product & Package Information
● Package : ATPAK
● JEITA, JEDEC :-
● Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking ATP103 LOT No.
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