Sanyo Electric ATP216
N-Channel Silicon MOSFET
| Part No. | ATP216 |
|---|---|
| Datasheet | ATP216 Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
●● N-Channel Silicon MOSFET General-Purpose Switching Device
APPLICATIONS
●● ON-resistance RDS(on)1=17mΩ(typ.) 1.8V drive Slim package Halogen free compliance Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 50 ±10 35 105 40 150 --55 to +150 40 17.5 Unit V V A A W °C °C mJ A Note : *1 VDD=10V, L=100μH, IAV=18A *2 L≤100μH, Single pulse Package Dimensions unit : mm (typ) 7057-001 6.5 0.5 1.5 0.4 Product & Package Information● Package : ATPAK
● JEITA, JEDEC :● Minimum Packing Quantity : 3,000 pcs./reel 4.6 2.6 0.4 Packing Type: TL Marking ATP216 4 4.6 6.05 LOT No. TL 7.3 9.5 Electrical Connection 1.7 2 0.5 1 0.8 2.3 2.3 3 0.55 0.7 2,4 0.6 0.4 1 : Gate 2 : Drain 3...
