ATP216 Datasheet PDF

FEATURES

● ON-resistance RDS(on)1=17mΩ(typ.)
● 1.8V drive
● Protection diode in
● Slim package
● Halogen free compliance Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=10V, L=100μH, IAV=18A *2 L≤100μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 50 ±10 35 105 40 150 --55 to +150 40 17.5 Unit V V A A W °C °C mJ A Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7057-001 6.5 4 1.5 0.4 ATP216-TL-H 4.6 2.6 0.4 Product & Package Information
● Package : ATPAK
● JEITA, JEDEC :-
● Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking ATP216 LOT No.