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B1118 - 2SB1118

Key Features

  • Low collector-to-emitter saturation voltage.
  • Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1118/2SD1618] ( ) : 2SB1118 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
B1119 2SB1119
B1120 2SB1120
B1121 2SB1121
B1122 2SB1122
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:1784B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1118/2SD1618 Low-Voltage High-Current Amplifier, Muting Applications Features · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1118/2SD1618] ( ) : 2SB1118 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Mounted on ceramic board (250mm2×0.