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BXL4001 - N-Channel Silicon MOSFET

Features

  • Low ON-resistance.
  • Motor drive.
  • Avalanche resistance guarantee.
  • 10V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Avalanche Energy (Single Pulse).
  • 1 Avalanche Current.
  • 2 Note :.
  • 1 VDD=30V, L=100μH, IAV=51A.
  • 2 L≤100μH, Single pulse Tc.

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Datasheet Details

Part number BXL4001
Manufacturer Sanyo
File Size 177.65 KB
Description N-Channel Silicon MOSFET
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Full PDF Text Transcription

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Ordering number : ENA1459 BXL4001 SANYO Semiconductors DATA SHEET BXL4001 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Motor drive. • Avalanche resistance guarantee. • 10V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=30V, L=100μH, IAV=51A *2 L≤100μH, Single pulse Tch Tstg EAS IAV Electrical Characteristics at Ta=25°C Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 75 ±20 85 340 1.
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