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C4694 - 2SC4694

Key Features

  • Adoption of MBIT process.
  • High DC current gain.
  • High VEBO (VEBO≥25V).
  • High reverse hFE (150 typ).
  • Small ON resistance [Ron=1Ω (IB=5mA)].
  • Very small-sized package permitting 2SC4694- applied sets to be made small and slim. 0.425 Package Dimensions unit:mm 2059B [2SC4694] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3485 NPN Epitaxial Planar Silicon Transistor 2SC4694 Low-Frequency General-Purpose Amplifier, Muting Applications Features · Adoption of MBIT process. · High DC current gain. · High VEBO (VEBO≥25V). · High reverse hFE (150 typ). · Small ON resistance [Ron=1Ω (IB=5mA)]. · Very small-sized package permitting 2SC4694- applied sets to be made small and slim. 0.425 Package Dimensions unit:mm 2059B [2SC4694] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.