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C4695 - 2SC4695

Datasheet Summary

Features

  • Adoption of FBET process.
  • High DC current gain.
  • High VEBO (VEBO≥25V).
  • High reverse hFE (150 typ).
  • Small ON resistance [Ron=1Ω (IB=5mA)].
  • Very small-sized package permitting 2SC4695- applied sets to be made small and slim. Package Dimensions unit:mm 2018B [2SC4695] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base.

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Datasheet Details

Part number C4695
Manufacturer Sanyo
File Size 103.04 KB
Description 2SC4695
Datasheet download datasheet C4695 Datasheet
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Full PDF Text Transcription

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Ordering number:EN3486 NPN Epitaxial Planar Silicon Transistor 2SC4695 Low-Frequency General-Purpose Amplifier, Muting Applications Features · Adoption of FBET process. · High DC current gain. · High VEBO (VEBO≥25V). · High reverse hFE (150 typ). · Small ON resistance [Ron=1Ω (IB=5mA)]. · Very small-sized package permitting 2SC4695- applied sets to be made small and slim. Package Dimensions unit:mm 2018B [2SC4695] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.
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