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C5416 - 2SC5416

Key Features

  • High breakdown voltage.
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process. Package Dimensions unit: mm 2079B-TO220FI (LS) [2SC5416] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.7 14.0 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation VCBO VCEO VEBO IC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN5696 NPN Triple Diffused Planar Silicon Transistor 2SC5416 Inverter Lighting Applications Features • High breakdown voltage. • High reliability (Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit: mm 2079B-TO220FI (LS) [2SC5416] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.7 14.0 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation VCBO VCEO VEBO IC ICP PC Tc=25°C Junction Temperature Tj Storage Temperature Tstg 0.75 1 23 2.55 2.55 2.