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C5696 - 2SC5696

Features

  • Package Dimensions unit : mm 2174A [2SC5696] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 21.0 4.0 2.8 2.0 20.4 0.7 1 2 5.45 3.5 3 0.9 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base V.

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    Ordering number : ENN6663C 2SC5696 NPN Triple Diffused Planar Silicon Transistor 2SC5696 Color TV Horizontal Deflection Output Applications Features • • • • • Package Dimensions unit : mm 2174A [2SC5696] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 21.0 4.0 2.8 2.0 20.4 0.7 1 2 5.45 3.5 3 0.9 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions 5.45 0.8 2.
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