C5696
Features
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- Package Dimensions unit : mm 2174A
[2SC5696]
16.0 5.0 3.4 5.6 3.1 8.0 22.0
High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.
21.0 4.0
2.8 2.0 20.4 0.7 1 2 5.45 3.5 3 0.9
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions
0.8 2.1
Ratings 1600 800 5 12 36 3.0 85 150 --55 to +150
Unit V V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCEO(sus) IEBO Conditions VCB=800V, IE=0 VCE=1600V, RBE=0 IC=100m A, IB=0 VEB=4V, IC=0 Ratings min typ...
