Sanyo Electric ECH8308
P-Channel Silicon MOSFET
FEATURES
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● General-Purpose Switching Device
APPLICATIONS
Best suited for load switching. Low ON-resistance. 1.8V drive. Halogen free compliance. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings --12 ±10 --10 --40 1.6 150 --55 to +150 Unit V V A A W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=-1mA, VGS=0V VDS=-12V, VGS=0V VGS=±8V, VDS=0V VDS=-6V, ID=-1mA VDS=-6V, ID=-5A ID=-5A, VGS=-4.5V ID=-3A, VGS=-2.5V ID=-1A, VGS=-1.8...