onsemi ECH8308
P-Channel Power MOSFET
| Part No. | ECH8308 |
|---|---|
| Datasheet | ECH8308 Download |
| Manufacturer |  onsemi |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Best Suited for Load Switching● 1.8 V Drive
● Protection Diode in
● Low ON−resistance
● This is a Pb−Free and Halide Free Device
ABSOLUTE MAXIMUM RATINGS
(at Ta = 25°C) Parameter Symbol Conditions Ratings Unit Drain−to−Source Voltage VDSS −12 V Gate−to−Source Voltage VGSS ±10 V Drain Current (DC) Drain Current (Pulse) ID IDP PW ≤ 10 ms, duty cycle ≤ 1% −10 A −40 A Allowable Power Dissipation PD When mounted on 1.6 W ceramic substrate (900 mm2 × 0.8 mm) Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. SOT−28FL / ECH8 CASE 318BF MARKING DIAGRAM JK Lot No. ELECTRICAL CONNECTION 8 765 1234 1: Source 2: Source 3: Source 4: Gate 5: Drain 6: Drain 7: Drain 8: Drain ORDERING INFORMATION Device Package Shipping† ECH8308−TL−H SOT−28FL / ECH8 3000 / (P...
