Sanyo Electric ECH8410
N-Channel Silicon MOSFET
| Part No. | ECH8410 |
|---|---|
| Datasheet | ECH8410 Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
●●
● N-Channel Silicon MOSFET General-Purpose Switching Device
APPLICATIONS
Low ON-resistance. 4V drive. Halogen free compliance. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings 30 ±20 12 60 1.6 150 --55 to +150 Unit V V A A W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V ID=3A, VGS=4.5V ID=3A, VGS=4V 1.2 7.5 7.5 13 15.5 10 18.2 22 Ratings min 30 1 ±10 2.6 typ max Unit V μA μA V S mΩ mΩ mΩ Marking : KQ Continued on next page.
