onsemi ECH8410
N-Channel Power MOSFET
FEATURES
● Low ON-resistance.● 4V drive.
● Halogen free compliance.
● Protection diode in Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings 30 ±20 12 60 1.6 150 --55 to +150 Unit V V A A W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-002 Top View 2.9 85 ECH8410-TL-H 0.15 0 to 0.02 Product & Package Information● Package : ECH8
● JEITA, JEDEC :-
● Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking KQ TL Lot No.