Sanyo Electric ECH8601R
N-Channel Silicon MOSFET
ECH8601R Specifications
- Drain-Source Resistance : 390mΩ
- Min Breakdown Voltage : 20V
- Terminals : 5
- Max Power Dissipation : 1.5W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | ECH8601R |
|---|---|
| Datasheet | ECH8601R Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
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● General-Purpose Switching Device
APPLICATIONS
Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging Switch. Common-drain type. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 ±12 6.5 40 1.4 1.5 150 --55 to +150 Unit V V A A W W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V...
