Sanyo Electric ECH8659
N-Channel Silicon MOSFET
| Part No. | ECH8659 |
|---|---|
| Datasheet | ECH8659 Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
●●
● General-Purpose Switching Device
APPLICATIONS
4V drive. Composite type, facilitating high-density mounting. Halogen free compliance. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings 30 ±20 7 40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A 1.2 2.2 3.7 Ratings min 30 1 ±10 2.6 typ max Unit V μA μA V S Marking : TE Continued on next page.
