Sanyo Electric ECH8667
P-Channel Silicon MOSFETs
| Part No. | ECH8667 |
|---|---|
| Datasheet | ECH8667 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFETs |
| Buy | Stock & Price |
FEATURES
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● P-Channel Silicon MOSFET General-Purpose Switching Device
APPLICATIONS
ON-resistance RDS(on)1=30mΩ(typ.) 4V drive Halogen free compliance SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --30 ±20 --5.5 --40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7011A-001 Top View 0.25 2.9 0.15 8 5 0 to 0.02 2.8 2.3 Product & Package Information● Package : ECH8
● JEITA, JEDEC :● Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking TN TL LOT No. 0.25 1 0.65 4 0.3 Electrical Connection 8 7 6 5 0.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Bottom View 0.07 1 2 3 4 SANYO : ECH8 72110PE TK IM TC-00002432 No.
