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ECH8667 Datasheet PDF

onsemi ECH8667

-30V -5.5A P-Channel Power MOSFET

Part No. ECH8667
Datasheet ECH8667 Download
Manufacturer
onsemi
Description -30V -5.5A P-Channel Power MOSFET
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ECH8667 datasheet page 1 preview

FEATURES

● ON-resistance RDS(on)1=30mΩ(typ.)
● 4V drive
● Halogen free compliance
● Protection diode in Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings Unit --30 V ±20 V --5.5 A --40 A 1.3 W 1.5 W 150 °C --55 to +150 °C Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-001 Top View 2.9 8 5 0.25 ECH8667-TL-H 0.15 0 to 0.02 Product & Package Information
● Package : ECH8
● JEITA, JEDEC :-
● Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking TN TL LOT No.
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