onsemi ECH8667
-30V -5.5A P-Channel Power MOSFET
FEATURES
● ON-resistance RDS(on)1=30mΩ(typ.)● 4V drive
● Halogen free compliance
● Protection diode in Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings Unit --30 V ±20 V --5.5 A --40 A 1.3 W 1.5 W 150 °C --55 to +150 °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-001 Top View 2.9 8 5 0.25 ECH8667-TL-H 0.15 0 to 0.02 Product & Package Information● Package : ECH8
● JEITA, JEDEC :-
● Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking TN TL LOT No.